IRHN7130, IRHN7150, IRHN7230 Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
IRHN7130, IRHN7150, IRHN7230 Datasheet download
Part Number: IRHN7130
MFG: IR
Package Cooled: N/A
D/C: 2010+
MFG:IR Package Cooled:N/A D/C:2010+
IRHN7130, IRHN7150, IRHN7230 Datasheet download
MFG: IR
Package Cooled: N/A
D/C: 2010+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IRHN7130
File Size: 520720 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHN7150
File Size: 291402 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHN7230
File Size: 526334 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHN7130, IRHN8130 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 14 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 9.0 | |
IDM | Pulsed Drain Current | 56 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.60 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 160 (see fig. 29) | mJ |
IAR | Avalanche Current | 14 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.5 (see fig. 30) | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 2.6 (Typical) | g |
International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter |
IRHN7150, IRHN8150 |
Units | |
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current |
34 |
A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current |
21 | |
IDM |
Pulsed Drain Current |
136 | |
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
Linear Derating Factor |
1.2 |
W/K | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
34 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ TSTG |
Operating Junction |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 (for 5 sec.) | ||
Weight |
2.6 (Typical) |
g |
International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHN7230, IRHN8230 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 9.0 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 6.0 | |
IDM | Pulsed Drain Current | 36 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.60 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 330 (see fig. 29) | mJ |
IAR | Avalanche Current | 9.0 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 (see fig. 30) | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 2.6 (Typical) | g |