IRHMS597160, IRHN7450SE, IRHN7C50SE Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:05+
IRHMS597160, IRHN7450SE, IRHN7C50SE Datasheet download
Part Number: IRHMS597160
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
IRHMS597160, IRHN7450SE, IRHN7C50SE
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Info of IRHMS597160
Info of IRHN7450SE
Info of IRHN7C50SE
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About IRHMS597160
PDF/DataSheet Download
Datasheet: IRHMS597160
File Size: 178430 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHN7450SE
PDF/DataSheet Download
Datasheet: IRHN7450SE
File Size: 114021 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHN7C50SE
PDF/DataSheet Download
Datasheet: IRHN7C50SE
File Size: 113243 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHMS597160 General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHMS597160 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25 | Continuous Drain Current | -45* | A |
| ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -30 | |
| IDM | Pulsed Drain Current | -180 | |
| PD @ TC = 25 | Max. Power Dissipation | 208 | W |
| Linear Derating Factor | 1.67 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 480 | mJ |
| IAR | Avalanche Current | -45 | A |
| EAR | Repetitive Avalanche Energy | 20.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -6.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHMS597160 Features
·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·High Electrical Conductive Package
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·High Electrical Conductive Package
IRHN7450SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHN7450SE Maximum Ratings
| Parameter | IRHN7450SE | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 12 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 7.0 | |
| IDM | Pulsed Drain Current | 48 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 12 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.0063 in. (1.6mm) from case for 10 sec.) | ||
| Weight | 2.6 (Typical) | g |
IRHN7450SE Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
IRHN7C50SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHN7C50SE Maximum Ratings
| Parameter | IRHN2C50SE, IRHN7C50SE | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 10.4 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 6.5 | |
| IDM | Pulsed Drain Current | 41.6 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 10.4 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (for 5 seconds) | ||
| Weight | 2.6 (Typical) | g |
IRHN7C50SE Features
· Radiation Hardened up to 1 x 105 Rads (Si)
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light-Weight
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light-Weight
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