IRHM9250, IRHM9260, IRHM93064 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:05+
IRHM9250, IRHM9260, IRHM93064 Datasheet download
Part Number: IRHM9250
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
IRHM9250, IRHM9260, IRHM93064
- Table of contents:
Info of IRHM9250
Info of IRHM9260
Info of IRHM93064
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About IRHM9250
PDF/DataSheet Download
Datasheet: IRHM9250
File Size: 136317 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHM9260
PDF/DataSheet Download
Datasheet: IRHM9260
File Size: 126597 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRH3054
PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHM9250 General Description
International Rectifier's RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM9250 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25 | Continuous Drain Current | -14 | A |
| ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -9.0 | |
| IDM | Pulsed Drain Current | -56 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | -14 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -41 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM9250 Features
·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight
IRHM9260 General Description
International Rectifier's RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM9260 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25 | Continuous Drain Current | -27 | A |
| ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -17 | |
| IDM | Pulsed Drain Current | -108 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | -27 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -9.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM9260 Features
·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermatically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermatically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
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