IRHM9150, IRHM9160, IRHM9230 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:00+
IRHM9150, IRHM9160, IRHM9230 Datasheet download
Part Number: IRHM9150
MFG: IR
Package Cooled: TO-254AA
D/C: 00+
IRHM9150, IRHM9160, IRHM9230
- Table of contents:
Info of IRHM9150
Info of IRHM9160
Info of IRHM9230
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About IRHM9150
PDF/DataSheet Download
Datasheet: IRHM9150
File Size: 139846 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHM9160
PDF/DataSheet Download
Datasheet: IRHM9160
File Size: 137399 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHM9230
PDF/DataSheet Download
Datasheet: IRHM9230
File Size: 206093 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHM9150 General Description
International Rectifier's RADHard HEXFETTM technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters.
IRHM9150 Maximum Ratings
|
|
Parameter |
|
Units |
|
ID @ VGS = -12V, TC = 25°C |
Continuous Drain Current |
-22 |
A |
|
ID @ VGS = -12V, TC = 100°C |
Continuous Drain Current |
-14 | |
|
IDM |
Pulsed Drain Current |
-88 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
|
|
Linear Derating Factor |
1.2 |
W/°C |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
|
IAR |
Avalanche Current |
-22 |
A |
|
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-23 |
V/ns |
|
TJ |
Operating Junction |
-55 to 150 |
|
|
|
Lead Temperature |
300 ( 0.063 in. (1.6mm) from case for 10s) | |
|
|
Weight |
9.3 (typical) |
g |
IRHM9150 Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
IRHM9160 General Description
International Rectifier's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHM9160 Maximum Ratings
| Parameter | IRHM9160 | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | -35* | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | -22 | |
| IDM | Pulsed Drain Current | -140 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | -35 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
| Weight | 9.3 (Typical) | g |
IRHM9160 Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Ceramic Eyelets
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Ceramic Eyelets
IRHM9230 General Description
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHM9230 Maximum Ratings
| Parameter | IRHM9230 | Units | |
| ID @ VGS = -12V, TC = 25V | Continuous Drain Current | -6.5 | A |
| ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -4.1 | |
| IDM | Pulsed Drain Current | -26 | |
| PD @ TC = 25 | Max. Power Dissipation | 75 | W |
| Linear Derating Factor | 0.2 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 330 | mJ |
| IAR | Avalanche Current | -6.5 | A |
| EAR | Repetitive Avalanche Energy | 7.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Package Mounting Surface Temperature | 300 (0.063 in. (1 .6mm) from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM9230 Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Electrically Isolated
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