IRHM7Z60, IRHM8054, IRHM8064 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:00+
IRHM7Z60, IRHM8054, IRHM8064 Datasheet download
Part Number: IRHM7Z60
MFG: IR
Package Cooled: TO-254AA
D/C: 00+
MFG:IR Package Cooled:TO-254AA D/C:00+
IRHM7Z60, IRHM8054, IRHM8064 Datasheet download
MFG: IR
Package Cooled: TO-254AA
D/C: 00+
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PDF/DataSheet Download
Datasheet: IRHM7Z60
File Size: 134751 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHM8064
File Size: 124327 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
International Rectifier's RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 35* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 35* | |
IDM | Pulsed Drain Current | 140 | |
PD @ TC = 25 | Max. Power Dissipation | 250 | W |
Linear Derating Factor | 2.0 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 35 | A |
EAR | Repetitive Avalanche Energy | 25 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 0.35 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
Weight | 9.3 (Typical) | g |
International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/ Sec, and return to normal operation within a few microseconds.
Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHM7064, IRHM8064 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 35* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 35* | |
IDM | Pulsed Drain Current | 295 | |
PD @ TC = 25 | Max. Power Dissipation | 250 | W |
Linear Derating Factor | 2.0 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 35 | A |
EAR | Repetitive Avalanche Energy | 25 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s | ||
Weight | 9.3 (Typical) | g | |