IRHM57260SE, IRHM57264SE, IRHM57Z60 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:00+
IRHM57260SE, IRHM57264SE, IRHM57Z60 Datasheet download
Part Number: IRHM57260SE
MFG: IR
Package Cooled: TO-254AA
D/C: 00+
IRHM57260SE, IRHM57264SE, IRHM57Z60
- Table of contents:
Info of IRHM57260SE
Info of IRHM57264SE
Info of IRHM57Z60
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About IRHM57260SE
PDF/DataSheet Download
Datasheet: IRHM57260SE
File Size: 115343 KB
Manufacturer: IRF [International Rectifier]
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About IRHM57264SE
PDF/DataSheet Download
Datasheet: IRHM57264SE
File Size: 97068 KB
Manufacturer:
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About IRHM57Z60
PDF/DataSheet Download
Datasheet: IRHM57Z60
File Size: 109201 KB
Manufacturer:
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IRHM57260SE General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57260SE Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 35* | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 35* | |
| IDM | Pulsed Drain Current | 140 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 35 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 10 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM57260SE Features
·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
IRHM57264SE General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57264SE Maximum Ratings
|
Parameter |
Units | ||
|
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
35* |
A |
|
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
26 | |
|
IDM |
Pulsed Drain Current |
140 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
250 |
W |
| Linear Derating Factor |
2.0 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
|
IAR |
Avalanche Current |
35 |
A |
|
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +150 |
|
| Storage Temperature Range |
300 (0.063 in.(1.6 mm from case for 10s)) | ||
| Weight |
9.3 ( Typical) |
g |
* Current is limited by internal wire diameter For footnotes refer to the last page
IRHM57264SE Features
· Single Event Effect (SEE) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electically Isolated
· Ceramic Eyelets
·Light Weight
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electically Isolated
· Ceramic Eyelets
·Light Weight
IRHM57Z60 General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57Z60 Maximum Ratings
|
Parameter |
Units | ||
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current |
35* |
A |
| ID @ VGS = 12V, TC = 100°C | Continuous Drain Current |
35* | |
|
IDM |
Pulsed Drain Current |
140 | |
| PD @ TC = 25°C | Max. Power Dissipation |
250 |
W |
| Linear Derating Factor |
2.0 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
|
IAR |
Avalanche Current |
35 |
A |
|
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
1.1 |
V/ns |
|
TJ |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
| Weight |
9.3 (Typical) |
g |
IRHM57Z60 Features
· Single Event Effect (SEE) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermatically Sealed
· Electically Isolated
· Ceramic Eyelets
· Light Weight
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermatically Sealed
· Electically Isolated
· Ceramic Eyelets
· Light Weight
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