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FQB8P10, FQB90N08, FQB95N03L

Table of contents:
Info of FQB8P10
Info of FQB90N08
Info of FQB95N03L

FQB8P10, FQB90N08, FQB95N03L Selling Leads, Datasheet

MFG:FAIRC Package Cooled:. D/C:06+

FQB8P10, FQB90N08, FQB95N03L Datasheet download

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Part Number: FQB8P10

MFG: FAIRC

Package Cooled: .

D/C: 06+

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FQB8P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQB8P10 Maximum Ratings

Symbol	Parameter	FQB8P10 / FQI8P10	Units
VDSS	Drain-Source Voltage	-100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	-8.0	A
ID		-5.7	A
IDM	Drain Current - Pulsed (Note 1)	-32	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	150	mJ
IAR	Avalanche Current (Note 1)	-8.0	A
EAR	Repetitive Avalanche Energy (Note 1)	6.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-56.0	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	65	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.43	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB8P10 Features

• -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQB90N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQB90N08 Maximum Ratings

Symbol	Parameter	FQB90N08 / FQI90N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	71	A
ID		50.2	A
IDM	Drain Current - Pulsed (Note 1)	284	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1360	mJ
IAR	Avalanche Current (Note 1)	71	A
EAR	Repetitive Avalanche Energy (Note 1)	16	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.75	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	160	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	1.06	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQB90N08 Features

• 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQB95N03L General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaininglow on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

FQB95N03L Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±16	V
I_D	Drain Current Continuous (T_C = 25oC, V_GS = 10V) Continuous (T_C= 100oC, V_GS = 4.5V) Continuous (T_C= 25oC, V_GS = 10V, R_JA = 43oC/W) Pulsed	75	A
		48	A
		15	A
		Figure4	A
P_D	Power dissipation Derate above 25	80 0.65	W W/
TJ, T_STG	Operating and Storage Temperature	-50 to 150

FQB95N03L Features

• Fast switching
• r_DS(ON) = 0.0064Ω (Typ), V_GS = 10V
• r_DS(ON) = 0.010Ω (Typ), V_GS= 5V
• Q_g (Typ) = 24nC, V_GS = 5V
• Q_gd(Typ) = 8nC
• CISS (Typ) = 2600pF

FQB95N03L Typical Application

• DC/DC converters

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