Features: • Fast switching• rDS(ON) = 0.0064Ω (Typ), VGS = 10V• rDS(ON) = 0.010Ω (Typ), VGS = 5V• Qg (Typ) = 24nC, VGS = 5V• Qgd (Typ) = 8nC• CISS (Typ) = 2600pFApplication• DC/DC convertersSpecifications Symbol Parameter Ratings Un...
FQB95N03L: Features: • Fast switching• rDS(ON) = 0.0064Ω (Typ), VGS = 10V• rDS(ON) = 0.010Ω (Typ), VGS = 5V• Qg (Typ) = 24nC, VGS = 5V• Qgd (Typ) = 8nC• CISS (Ty...
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Symbol | Parameter |
Ratings |
Units |
VDSS | Drain to Source Voltage |
30 |
V |
VGS | Gate to Source Voltage |
±16 |
V |
ID | Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA = 43oC/W) Pulsed |
75 |
A |
48 |
A | ||
15 |
A | ||
Figure4 |
A | ||
PD | Power dissipation Derate above 25 |
80 0.65 |
W W/ |
TJ, TSTG | Operating and Storage Temperature |
-50 to 150 |
FQB95N03L employs a new advanced trench MOSFET technology and features low gate charge while maintaininglow on-resistance.
Optimized for switching applications, FQB95N03L improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.