Features: • Fast switching• rDS(ON) = 0.010Ω (Typ), VGS = 10V• rDS(ON) = 0.017Ω (Typ), VGS = 5V• Qg (Typ) = 13nC, VGS = 5V• Qgd (Typ) = 4.5nC• CISS (Typ) = 1650pFApplication• DC/DC convertersSpecifications Symbol Parameter Ragomgs ...
FQB60N03L: Features: • Fast switching• rDS(ON) = 0.010Ω (Typ), VGS = 10V• rDS(ON) = 0.017Ω (Typ), VGS = 5V• Qg (Typ) = 13nC, VGS = 5V• Qgd (Typ) = 4.5nC• CISS (T...
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Symbol |
Parameter |
Ragomgs |
Units |
VDSS | Drain to Source Voltage |
30 |
V |
VGS | Gate to Source Voltage |
±16 |
V |
ID | Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA = 43/W) Pulsed |
51 |
A |
27 |
A | ||
7 |
A | ||
Figure4 |
A | ||
PD | Power dissipation Derate above 25 |
62 0.5 |
W W/ |
TJ, TSTG | Operating and Storage Temperature |
-55to150 |
FQB60N03L employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance.
Optimized for switching applications, FQB60N03L improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.