FQB12N20L, FQB12N50, FQB12N50TM Selling Leads, Datasheet
Package Cooled:TO-263 D/C:09+
FQB12N20L, FQB12N50, FQB12N50TM Datasheet download
Part Number: FQB12N20L
MFG: --
Package Cooled: TO-263
D/C: 09+
FQB12N20L, FQB12N50, FQB12N50TM
- Table of contents:
Info of FQB12N20L
Info of FQB12N50
Info of FQB12N50TM
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About FQB12N20L
PDF/DataSheet Download
Datasheet: FQB12N20L
File Size: 621858 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB12N50
PDF/DataSheet Download
Datasheet: FQB12N50
File Size: 632044 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB10N20
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB12N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control.
FQB12N20L Maximum Ratings
|
Symbol |
Parameter |
FQB12N20L / FQI12N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
11.6 |
A |
|
- Continuous (TC = 100°C) |
7.35 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
46.4 |
A | |
|
VGSS |
Gate-Source Voltage |
±20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
11.6 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
9.0 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.5 |
W | |
|
Power Dissipation (TC = 25°C) |
90 |
W | ||
|
- Derate above 25°C |
0.72 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQB12N20L Features
• 11.6A, 200V, RDS(on) = 0.28 @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers
FQB12N50 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.
FQB12N50 Maximum Ratings
| Symbol | Parameter |
FQB12N50 / FQI12N50 |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.1 |
A |
|
7.6 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
48.4 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
878 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.1 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
17.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
179 |
W | |
|
1.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB12N50 Features
• 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V
• Low gate charge ( typical 39 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 39 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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