Features: • 45A, 150V, RDS(on) = 0.04 @VGS = 10 V• Low gate charge ( typical 72 nC)• Low Crss ( typical 135 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB45N15V2/FQI45N15V2 Units V...
FQB45N15V2: Features: • 45A, 150V, RDS(on) = 0.04 @VGS = 10 V• Low gate charge ( typical 72 nC)• Low Crss ( typical 135 pF)• Fast switching• 100% avalanche tested• Improved d...
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Symbol |
Parameter |
FQB45N15V2/FQI45N15V2 |
Units | |
VDSS |
Drain-Source Voltage |
150 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
45 |
A |
- Continuous (TC = 100°C) |
31 |
A | ||
IDM |
DrainCurrentPulsed (Note 1) |
180 |
A | |
VGSS |
Gate-Source Voltage |
± 30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1124 |
mJ | |
IAR |
Avalanche Current (Note 1) |
45 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
22 |
mJ | |
d v/dt |
PeakDiode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD TJ, TSTG |
Power Dissipation (TC = 25°C) |
220 |
W | |
- Derate above 25°C |
1.47 |
W/°C | ||
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB45N15V2 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB45N15V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.