MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FQB10N20C, FQB10N20CTM, FQB10N20LTM Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 200V 10A D2PAK
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PDF/DataSheet Download
Datasheet: FQB10N20C
File Size: 623428 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
|
Symbol |
Parameter |
FQB10N20C/FQI10N20C |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
9.5 |
A |
|
- Continuous (TC = 100°C) |
6.0 |
A | ||
|
IDM |
DrainCurrentPulsed (Note 1) |
38 |
A | |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
9.5 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
|
d v/dt |
PeakDiode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TC = 25°C) |
72 |
W | |
|
- Derate above 25°C |
0.57 |
W/°C | ||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
| Technical/Catalog Information | FQB10N20CTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| Power - Max | 72W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQB10N20CTM FQB10N20CTM |
| Technical/Catalog Information | FQB10N20LTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 830pF @ 25V |
| Power - Max | 3.13W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 17nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQB10N20LTM FQB10N20LTM |
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