FQB10N20L, FQB10N60C, FQB11N40 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:TO
FQB10N20L, FQB10N60C, FQB11N40 Datasheet download
Part Number: FQB10N20L
MFG: FAIRC
Package Cooled: .
D/C: TO
FQB10N20L, FQB10N60C, FQB11N40
- Table of contents:
Info of FQB10N20L
Info of FQB10N60C
Info of FQB11N40
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About FQB10N20L
PDF/DataSheet Download
Datasheet: FQB10N20L
File Size: 587826 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB10N60C
PDF/DataSheet Download
Datasheet: FQB10N60C
File Size: 628913 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB11N40
PDF/DataSheet Download
Datasheet: FQB11N40
File Size: 580533 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB10N20L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,
FQB10N20L Maximum Ratings
|
Symbol |
Parameter |
FQB10N20L / FQI10N20L |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC =25°C) |
10 |
A |
|
- Continuous (TC = 100°C) |
6.3 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
40 |
A | |
|
VGSS |
Gate-Source Voltage |
±20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
180 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
10 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) |
3.13 |
W | |
|
Power Dissipation (TC = 25°C) |
87 |
W | ||
|
- Derate above 25°C |
0.7 |
W/°C | ||
|
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
FQB10N20L Features
• 10A, 200V, RDS(on) = 0.36 @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers
FQB10N60C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQB10N60C Maximum Ratings
| Symbol | Parameter |
FQB10N60C / FQI10N60C |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.5 |
A |
|
3.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
38 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
700 |
mJ |
| IAR | Avalanche Current (Note 1) |
9.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
156 |
W | |
|
1.25 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB10N60C Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB11N40 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
FQB11N40 Maximum Ratings
| Symbol | Parameter |
FQB11N40 / FQI11N40 |
Units |
| VDSS | Drain-Source Voltage |
400 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11.4 |
A |
|
7.2 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
46 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
520 |
mJ |
| IAR | Avalanche Current (Note 1) |
11.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
14.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
147 |
W | |
|
1.18 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB11N40 Features
• 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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