FQB12N60, FQB12N60C, FQB12P10 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:06+
FQB12N60, FQB12N60C, FQB12P10 Datasheet download
Part Number: FQB12N60
MFG: FAIRC
Package Cooled: .
D/C: 06+
FQB12N60, FQB12N60C, FQB12P10
- Table of contents:
Info of FQB12N60
Info of FQB12N60C
Info of FQB12P10
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About FQB12N60
PDF/DataSheet Download
Datasheet: FQB12N60
File Size: 553760 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB12N60C
PDF/DataSheet Download
Datasheet: FQB12N60C
File Size: 657789 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB12P10
PDF/DataSheet Download
Datasheet: FQB12P10
File Size: 651054 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB12N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQB12N60 Maximum Ratings
| Symbol | Parameter |
FQB12N60 / FQI12N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
10.5 |
A |
|
6.7 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
42 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
790 |
mJ |
| IAR | Avalanche Current (Note 1) |
10.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
18 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
180 |
W | |
|
1.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB12N60 Features
• 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB12N60C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQB12N60C Maximum Ratings
| Symbol | Parameter |
FQB12N60C / FQI12N60C |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12 |
A |
|
7.4 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
48 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
870 |
mJ |
| IAR | Avalanche Current (Note 1) |
12 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
22.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
225 |
W | |
|
1.78 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB12N60C Features
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB12P10 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
FQB12P10 Maximum Ratings
| Symbol | Parameter |
FQB12P10 / FQI12P10 |
Units |
| VDSS | Drain-Source Voltage |
-100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-11.5 |
A |
|
-8.1 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-46 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
370 |
mJ |
| IAR | Avalanche Current (Note 1) |
-11.5 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
|
0.5 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB12P10 Features
• -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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