FQB13N50C, FQB140N03L, FQB140N03LTM Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:TO
FQB13N50C, FQB140N03L, FQB140N03LTM Datasheet download
Part Number: FQB13N50C
MFG: FAIRC
Package Cooled: .
D/C: TO
FQB13N50C, FQB140N03L, FQB140N03LTM
- Table of contents:
Info of FQB13N50C
Info of FQB140N03L
Info of FQB140N03LTM
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About FQB13N50C
PDF/DataSheet Download
Datasheet: FQB13N50C
File Size: 662908 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB140N03L
PDF/DataSheet Download
Datasheet: FQB140N03L
File Size: 659140 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQB10N20
PDF/DataSheet Download
Datasheet: FQB10N20
File Size: 813186 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQB13N50C General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQB13N50C Maximum Ratings
| Symbol | Parameter |
FQB13N50C / FQI13N50C |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
13 |
A |
|
8 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
52 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
860 |
mJ |
| IAR | Avalanche Current (Note 1) |
13 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
19.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
195 |
W | |
|
1.56 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB13N50C Features
• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 43nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 43nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQB140N03L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
FQB140N03L Maximum Ratings
| Symbol | Parameter |
FQB140N03L / FQI140N03L |
Units |
| VDSS | Drain-Source Voltage |
30 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
140 |
A |
|
99 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
490 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
710 |
mJ |
| IAR | Avalanche Current (Note 1) |
140 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
18.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
180 |
W | |
|
1.2 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQB140N03L Features
• 140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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