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FQB8N60CF

Features: • 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 28nC)• Low Crss ( typical 12pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Parameter Parameter Value Units VDSS Drain-Source Voltage ...

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SeekIC No. : 004343161 Detail

FQB8N60CF: Features: • 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 28nC)• Low Crss ( typical 12pF)• Fast switching• 100% avalanche tested• Improved dv...

FQB8N60CF Data Sheet

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Part Number:
FQB8N60CF
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V
• Low gate charge ( typical 28nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Parameter Parameter Value Units
VDSS Drain-Source Voltage 600 V
ID Drain Current- Continuous (TC = 25°C) 6.26 A
- Continuous (TC = 25°C) 3.96 A
IDM Drain Current - Pulsed (Note 1) 25 A
PD Power Dissipation (TC = 25°C) 147 W
- Derate above 25°C 1.18 W/
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
 VGSS  Gate-Source Voltage  ± 30  V
IAR Avalanche Current (Note 1) 6.26 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Tj, Tstg Operating Junction Temperature Range -55 to +150
TL Storage Temperature Range 300



Description

These N-Channel enhancement mode power FQB8N60CF field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB8N60CF has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB8N60CF is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




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