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FQB9N50CF

Features: • 9A, 500V, RDS(on) = 0.85 @VGS = 10 V• Low gate charge ( typical 28nC)• Low Crss ( typical 24pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Characteristic FQB9N50CF Units VDSS Drain-to-Sou...

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SeekIC No. : 004343169 Detail

FQB9N50CF: Features: • 9A, 500V, RDS(on) = 0.85 @VGS = 10 V• Low gate charge ( typical 28nC)• Low Crss ( typical 24pF)• Fast switching• 100% avalanche tested• Improved dv/d...

FQB9N50CF Data Sheet

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Part Number:
FQB9N50CF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 9A, 500V, RDS(on) = 0.85 @VGS = 10 V
• Low gate charge ( typical 28nC)
• Low Crss ( typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
 Characteristic
FQB9N50CF
 Units
VDSS
 Drain-to-Source Voltage
500
 V
ID
 Continuous Drain Current (TC=25 )
9
 A
Continuous Drain Current (TC=100 )
5.7
 A
IDM
 Drain Current - Pulsed(Note 1)
36
 A
VGSS
 Gate-Source Voltage
±30
 V
EAS
 Single Pulsed Avalanche Energy
300
 mJ
IAR
 Avalanche Current(Note 1)
5
 A
EAR
 Repetitive Avalanche Energy(Note 1)
9.6
 mJ
dv/dt
 Peak Diode Recovery dv/dt(Note 3)
4.5
 V/ns
PD
 Power Dissipation (TC=25 )
- Derate above 25°C
173
1.38
 W
W/
TJ , TSTG
 Operating and Storage Temperature Range
- 55 to +150
TL
 Maximum Lead Temp. for Soldering
Purposes,1/8` from case for 5 seconds
300



Description

These N-Channel enhancement mode power FQB9N50CF field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB9N50CF has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB9N50CF is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




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