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This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild's 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064AS minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON) .
FDZ7064AS Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (Note 1a)
13.5
A
Pulsed
60
PD
Power Dissipation (Steady State) (Note 1a)
2.2
W
TJ, Tstg
Operating and Storage Junction Temperature Range
55 to +150
°C
FDZ7064AS Features
13.5 A, 30 V. RDS(ON) = 5.6 m @ VGS = 10 V RDS(ON) = 7.1 m @ VGS = 4.5 V
Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.76 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability.
FDZ7064AS Typical Application
DC/DC converters
FDZ7064N Parameters
Technical/Catalog Information
FDZ7064N
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
13.5A
Rds On (Max) @ Id, Vgs
7 mOhm @ 14.5A, 10V
Input Capacitance (Ciss) @ Vds
3843pF @ 15V
Power - Max
2.2W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
43nC @ 4.5V
Package / Case
BGA
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDZ7064N FDZ7064N
FDZ7064S General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild's 30V PowerTrenchSyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON).
FDZ7064S Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±16
V
ID
Drain Current Continuous (Note 1a) Pulsed
13.5
A
60
PD
Power Dissipation (Steady State) (Note 1a)
2.2
W
TJ, Tstg
Operating and Storage Junction Temperature Range
55 to +150
FDZ7064S Features
13.5 A, 30 V. RDS(ON) = 7 m @ VGS = 10 V RDS(ON) = 9 m @ VGS = 4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.8 mm height when mounted to PCB 3.5 x 4 mm2 Footprint High power and current handling capability.