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FDZ201N, FDZ201N_NL, FDZ202P

Table of contents:
Info of FDZ201N
Info of FDZ201N_NL
Info of FDZ202P

FDZ201N, FDZ201N_NL, FDZ202P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDZ201N, FDZ201N_NL, FDZ202P Datasheet download

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Part Number: FDZ201N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET P-CH 20V 5.5A BGA

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FDZ201N Parameters

Technical/Catalog Information	FDZ201N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	18 mOhm @ 9A, 4.5V
Input Capacitance (Ciss) @ Vds	1127pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	12-BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ201N FDZ201N FDZ201NTR ND FDZ201NTRND FDZ201NTR

FDZ201N General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and R_DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ201N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	9	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.7	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +175	°C

FDZ201N Features

* 9 A, 20 V. R_DS(ON) = 0.018 @ V_GS = 4.5 V =R_DS(ON) = 0.030 @ V_GS = 2.5 V.
* Occupies only 5 mm² of PCB area. Only 55% of the area of SSOT-6
* Ultra-thin package: less than 0.70 mm height whe mounted to PCB
* Outstanding thermal transfer characteristics: 4 times better than SSOT-6
* Ultra-low Q_g x R_DS(ON) figure-of-merit.
* High power and current handling capability.

FDZ201N Typical Application

* Battery management
* Load switch
* Battery protection

FDZ202P Parameters

Technical/Catalog Information	FDZ202P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	45 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	884pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	12-BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ202P FDZ202P

FDZ202P General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and R_DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ202P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	5.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-20	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.7	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +175	°C

FDZ202P Features

* 5.5 A, 20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V R_DS(ON) = 0.075 @ V_GS = 2.5 V.
* Occupies only 5 mm² of PCB area. Only 55% of the area of SSOT-6
* Ultra-thin package: less than 0.70 mm height when mounted to PCB
* Outstanding thermal transfer characteristics:4 times better than SSOT-6
* Ultra-low Q_g x R_DS(ON) figure-of-merit.
* High power and current handling capability.

FDZ202P Typical Application

* Battery management
* Load switch
* Battery protection

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