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FDZ2551N, FDZ2552P, FDZ2553N

Table of contents:
Info of FDZ2551N
Info of FDZ2552P
Info of FDZ2553N

FDZ2551N, FDZ2552P, FDZ2553N Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDZ2551N, FDZ2552P, FDZ2553N Datasheet download

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Part Number: FDZ2551N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 20V 9.6A BGA

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FDZ2551N General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and R_DS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON).

FDZ2551N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	9	A
I_D		20	A
P_D	Power Dissipation (Steady State) (Note 1a)	3	W
T_J, T_stg	Operating and Storage Junction Temperature Range	55 to +150

FDZ2551N Features

9 A, 20 V. R_DS(ON) = 0.018 @ V_GS = 4.5 V
R_DS(ON) = 0.030 @ V_GS = 2.5 V.
Occupies only 0.10 cm² of PCB area. 1/3 the area of SO-8.
Ultra-thin package: less than 0.70 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Ultra-low Qg x RDS(ON) figure-of-merit.
High power and current handling capability.

FDZ2551N Typical Application

Battery management
Load switch
Battery protection

FDZ2551N Connection Diagram

FDZ2552P General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and R_DS(ON). This dual BGA MOSFET embodies abreakthrough in packaging technology which enables the device to combine excellent thermal transfe characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low R_DS(ON).

FDZ2552P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	6	A
I_D		-20	A
P_D	Power Dissipation (Steady State) (Note 1a)	3.0	W
T_J, T_stg	Operating and Storage Junction Temperature Range	55 to +150

FDZ2552P Features

6 A, 20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V
R_DS(ON) = 0.075 @ V_GS = 2.5 V
Occupies only 0.10 cm² of PCB area. 1/3 the area of SO-8.
Ultra-thin package: less than 0.70 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Ultra-low Qg x RDS(ON) figure-of-merit.
High power and current handling capability.

FDZ2552P Typical Application

Battery management
Load switch
Battery protection

FDZ2552P Connection Diagram

FDZ2553N Parameters

Technical/Catalog Information	FDZ2553N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9.6A
Rds On (Max) @ Id, Vgs	14 mOhm @ 9.6A, 4.5V
Input Capacitance (Ciss) @ Vds	1299pF @ 10V
Power - Max	2.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ2553N FDZ2553N

FDZ2553N General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and R_DS(ON). This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ2553N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	9.6	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.1	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ2553N Features

* 9.6 A, 20 V. R_DS(ON) = 14 m @ VGS = 4.5 V R_DS(ON) = 20 m @ VGS = 2.5 V

* Occupies only 0.10 cm ² of PCB area: 1/3 the area of SO-8.
* Ultra-thin package: less than 0.80 mm height when mounted to PCB.
* Outstanding thermal transfer characteristics: significantly better than SO-8.
* Ultra-low Q_g x R_DS(ON) figure-of-merit
* High power and current handling capability

FDZ2553N Typical Application

* Battery management
* Load switch
* Battery protection

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