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FDZ299P, FDZ3606, FDZ493P

Table of contents:
Info of FDZ299P
Info of FDZ3606
Info of FDZ493P

FDZ299P, FDZ3606, FDZ493P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:03+

FDZ299P, FDZ3606, FDZ493P Datasheet download

Five Points

Part Number: FDZ493P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 03+

Description: MOSFET P-CHAN 20V 4.6A 9-BGA

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FDZ299P Parameters

Technical/Catalog Information	FDZ299P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.6A
Rds On (Max) @ Id, Vgs	55 mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) @ Vds	742pF @ 10V
Power - Max	1.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ299P FDZ299P

FDZ299P General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and R_DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ299P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-4.6	A
I_D	Drain Current Continuous (Note 1a) Pulsed	10	A
P_D	Power Dissipation (Steady State) (Note 1a)	1.7	W
T_J, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ299P Features

* 4.6 A, 20 V R_DS(ON) = 55 m @ VGS = 4.5 V R_DS(ON) = 80 m @ V_GS= 2.5 V
* Occupies only 2.25 mm² of PCB area. Less than 50% of the area of a SSOT-6
* Ultra-thin package: less than 0.80 mm height when mounted to PCB
* Outstanding thermal transfer characteristics: 4 times better than SSOT-6
* Ultra-low Q_g x R_DS(ON) figure-of-merit
* High power and current handling capability.

FDZ299P Typical Application

* Battery management
* Load switch
* Battery protection

FDZ493P Parameters

Technical/Catalog Information	FDZ493P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.6A
Rds On (Max) @ Id, Vgs	46 mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) @ Vds	754pF @ 10V
Power - Max	1.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 4.5V
Package / Case	9-BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ493P FDZ493P FDZ493PTR ND FDZ493PTRND FDZ493PTR

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