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FDZ208P, FDZ209N, FDZ2553NZ

Table of contents:
Info of FDZ208P
Info of FDZ209N
Info of FDZ2553NZ

FDZ208P, FDZ209N, FDZ2553NZ Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:2007+ D/C:2100

FDZ208P, FDZ209N, FDZ2553NZ Datasheet download

Five Points

Part Number: FDZ208P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 2007+

D/C: 2100

Description: MOSFET N-CH 20V 9.6A BGA

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FDZ208P Parameters

Technical/Catalog Information	FDZ208P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.5A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2409pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ208P FDZ208P

FDZ208P General Description

Combining Fairchild's advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ208P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	± 25	V
I_D	Drain Current Continuous (Note 1a) Pulsed	12.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	60	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.2	W
P_D	Power Dissipation (Steady State) (Note 1a)	1.0	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ208P Features

* 12.5 A, 30 V. R_DS(ON) = 10.5 _m @ V_GS = 10 V R_DS(ON) = 16.5 m @ V_GS= 4.5 V
* Occupies only 14 mm₂ of PCB area. Only 42% of the area of SO-8
* Ultra-thin package: less than 0.8 mm height when mounted to PCB
* 3.5 x 4 mm² footprint
* High power and current handling capability

FDZ208P Typical Application

* Battery management
* Load switch
* Battery protection

FDZ209N Parameters

Technical/Catalog Information	FDZ209N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	80 mOhm @ 4A, 5V
Input Capacitance (Ciss) @ Vds	657pF @ 30V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	9nC @ 5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ209N FDZ209N FDZ209NCT ND FDZ209NCTND FDZ209NCT

FDZ209N General Description

Combining Fairchild's advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON).

FDZ209N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	4	A
I_D		20	A
P_D	Power Dissipation (Steady State) (Note 1a)	2	W
T_J, T_stg	Operating and Storage Junction Temperature Range	55 to +150

FDZ209N Features

4 A, 60 V. R_DS(ON) = 80 m@ V_GS = 5 V
Occupies only 5 mm² of PCB area: only 55% of the area of SSOT-6
Ultra-thin package: less than 0.80 mm height when mounted to PCB
Outstanding thermal transfer characteristics: 4 times better than SSOT-6
Ultra-low Qg x R_DS(ON) figure-of-merit
High power and current handling capability

FDZ209N Typical Application

Solenoid Drivers

FDZ209N Connection Diagram

FDZ2553NZ Parameters

Technical/Catalog Information	FDZ2553NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	9.6A
Rds On (Max) @ Id, Vgs	14 mOhm @ 9.6A, 4.5V
Input Capacitance (Ciss) @ Vds	1240pF @ 10V
Power - Max	2.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ2553NZ FDZ2553NZ

FDZ2553NZ General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and R_DS(ON). This common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON).

FDZ2553NZ Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	9.6	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.1	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ2553NZ Features

9.6 A, 20 V. RDS(ON) = 14 m @ VGS = 4.5 V RDS(ON) = 20 m @ VGS = 2.5 V

Occupies only 0.10 cm²of PCB area: 1/3 the area of SO-8.

Ultra-thin package: less than 0.70 mm height when mounted to PCB.

ESD protection diode (note 3)

Outstanding thermal transfer characteristics:
significantly better than SO-8. Ultra-low Q_gx R_DS(ON) figure-of-merit

High power and current handling capability

FDZ2553NZ Typical Application

Battery management

Load switch

Battery protection

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