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Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
FDZ2554P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
6.5
A
-20
PD
Power Dissipation (Steady State) (Note 1a)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDZ2554P Features
* 6.5 A, 20 V. RDS(ON) = 28 m @ VGS = 4.5 V RDS(ON) = 45 m @ VGS = 2.5 V
* Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * Outstanding thermal transfer characteristics: significantly better than SO-8 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability
Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space and RDS(ON) . This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .
FDZ2554PZ Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
6.5
A
-20
PD
Power Dissipation (Steady State) (Note 1a)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDZ2554PZ Features
* 6.5 A, 20 V. RDS(ON) = 28 m @ VGS = 4.5 V RDS(ON) = 45 m @ VGS = 2.5 V * >4800V ESD Protection * Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * Outstanding thermal transfer characteristics: significantly better than SO-8 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability