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Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
FDZ5047N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
ID
Drain Current Continuous (Note 1a) Pulsed
22
A
PD
75
W
Total Power Dissipation @ TA = 25°C
2.8
TJ, TSTG
Operating and Storage Junction Temperature Range
50 to +150
FDZ5047N Features
22 A, 30 V. RDS(ON) = 2.9 m @ VGS = 10 V RDS(ON) = 4.5 m @ VGS = 4.5 V Occupies only 27.5 mm2 of PCB area: 1/5 of the area of a TO-220 package Ultra-thin package: less than 0.90 mm height when mounted to PCB Outstanding thermal transfer characteristics Ultra-low gate charge x RDS(ON) product