MOSFET 20V/12V NChannel BGa
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 0.018 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | BGA | Packaging : | Reel |
* 9 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V =RDS(ON) = 0.030 @ VGS = 2.5 V.
* Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6
* Ultra-thin package: less than 0.70 mm height whe mounted to PCB
* Outstanding thermal transfer characteristics: 4 times better than SSOT-6
* Ultra-low Qg x RDS(ON) figure-of-merit.
* High power and current handling capability.
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current Continuous (Note 1a) |
9 |
A |
20 | |||
PD |
Power Dissipation (Steady State) (Note 1a) |
2.7 |
W |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +175 |
°C |
Technical/Catalog Information | FDZ201N |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1127pF @ 10V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
Package / Case | 12-BGA |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDZ201N FDZ201N FDZ201NTR ND FDZ201NTRND FDZ201NTR |