FDZ202P

MOSFET 20V/12V P-Channel

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SeekIC No. : 00162992 Detail

FDZ202P: MOSFET 20V/12V P-Channel

floor Price/Ceiling Price

Part Number:
FDZ202P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 0.037 Ohms Configuration : Single Quint Source Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.037 Ohms
Package / Case : BGA
Configuration : Single Quint Source Hex Drain


Features:

* 5.5 A, 20 V. RDS(ON) = 0.045 @ VGS = 4.5 V    RDS(ON) = 0.075 @ VGS = 2.5 V.
* Occupies only 5 mm2  of PCB area. Only 55% of the area of SSOT-6
* Ultra-thin package:  less than 0.70 mm height when mounted to PCB
* Outstanding thermal transfer characteristics:4 times better than SSOT-6
* Ultra-low Qg x RDS(ON) figure-of-merit.
* High power and current handling capability.




Application

* Battery management 
* Load switch
* Battery protection



Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

-20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current Continuous (Note 1a)
Pulsed

5.5

A

-20

PD

Power Dissipation (Steady State) (Note 1a)

2.7

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +175

°C




Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON) .  This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high  current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .  




Parameters:

Technical/Catalog InformationFDZ202P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs45 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds 884pF @ 10V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 4.5V
Package / Case12-BGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ202P
FDZ202P



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