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FDZ203N, FDZ204P, FDZ206P

Table of contents:
Info of FDZ203N
Info of FDZ204P
Info of FDZ206P

FDZ203N, FDZ204P, FDZ206P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDZ203N, FDZ204P, FDZ206P Datasheet download

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Part Number: FDZ203N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET P-CH 20V 13A BGA

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FDZ203N Parameters

Technical/Catalog Information	FDZ203N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	18 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1127pF @ 10V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ203N FDZ203N

FDZ203N General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA OSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).

FDZ203N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	7.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Steady State) (Note 1a)	1.6	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDZ203N Features

* 7.5 A, 20 V. R_DS(ON) = 18 m @ VGS = 4.5 R_DS(ON) = 30 m @ V_GS = 2.5 V

* Occupies only 4 mm² of PCB area. Less than 40% of the area of a SSOT-6
* Ultra-thin package: less than 0.80 mm height when mounted to PCB
* Ultra-low Q_g x R_DS(ON) figure-of-merit.
* High power and current handling capability.

FDZ203N Typical Application

* Battery management
* Load switch
* Battery protection

FDZ204P Parameters

Technical/Catalog Information	FDZ204P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	45 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds	884pF @ 10V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ204P FDZ204P

FDZ204P General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and R_DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ204P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-4.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-20	A
P_D	Power Dissipation (Steady State) (Note 1a)	1.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ204P Features

* 4.5 A, 20 V. R_DS(ON) = 45 m @ V_GS = 4.5 V R_DS(ON) = 75 m @ V_GS = 2.5 V
* Occupies only 4 mm² of PCB area.
Less than 40% of the area of a SSOT-6
* Ultra-thin package: less than 0.80 mm height when
mounted to PCB
* Ultra-low Q_g x R_DS(ON) figure-of-merit.
* High power and current handling capability.

FDZ204P Typical Application

* Battery management
* Load switch
* Battery protection

FDZ206P Parameters

Technical/Catalog Information	FDZ206P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 13A, 4.5V
Input Capacitance (Ciss) @ Vds	4280pF @ 10V
Power - Max	2.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	53nC @ 4.5V
Package / Case	BGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDZ206P FDZ206P

FDZ206P General Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and R_DS(ON) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON) .

FDZ206P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-13	A
I_D	Drain Current Continuous (Note 1a) Pulsed	60	A
P_D	Power Dissipation (Steady State) (Note 1a)	2.2	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDZ206P Features

* 13 A, 20 V. R_DS(ON) = 9.5 m @ V_GS = 4.5 V R_DS(ON) = 14.5 m @ V_GS = 2.5 V
* Occupies only 14 mm² of PCB area. Only 42% of the area of SO-8
* Ultra-thin package: less than 0.80 mm height whe mounted to PCB
* 0.65 mm ball pitch
* 3.5 x 4 mm² footprint
* High power and current handling capability

FDZ206P Typical Application

* Battery management
* Load switch
* Battery protection

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