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FDW2508, FDW2508P, FDW2508P_NL

Table of contents:
Info of FDW2508
Info of FDW2508P
Info of FDW2508P_NL

FDW2508, FDW2508P, FDW2508P_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:2009 D/C:04 05

FDW2508, FDW2508P, FDW2508P_NL Datasheet download

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Part Number: FDW2508

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 2009

D/C: 04 05

Description: MOSFET P-CH DUAL 12V 6A 8-TSSOP

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FDW2508P Parameters

Technical/Catalog Information	FDW2508P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	18 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	2644pF @ 6V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	36nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2508P FDW2508P

FDW2508P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDW2508P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-12	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current Continuous (Note 1a) Pulsed	6	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Total Power Dissipation (Note 1a) (Note 1b)	1.3	W
P_D	Total Power Dissipation (Note 1a) (Note 1b)	1	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150

FDW2508P Features

6 A, 12 V. R_DS(ON) = 18 m@ V_GS = 4.5 V
R_DS(ON) = 22 m@ V_GS = 2.5 V
R_DS(ON) = 30 m@ V_GS = 1.8 V
Low gate charge(26nC typical)
High performance trench technology for extremely low R_DS(ON)
Low profile TSSOP-8 package

FDW2508P Typical Application

Power management
Load switch
Battery protection

FDW2508P Connection Diagram

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