FDW2501N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Features:

6 A, 20 V. R_DS(ON) = 0.018@ V_GS= 4.5V

                   R_DS(ON) = 0.028@ V_GS= 2.5V 

Extended VGSS range (±12V) for battery applications. 

High performance trench technology for extremely low R_DS(ON)

Low profile TSSOP-8 package

Application




Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	6	A
		30
PD	Power Dissipation (Note 1a) (Note 1b)	1.0	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150

Description

This N-Channel 2.5V specified MOSFET FDW2501N is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).


Parameters:

Technical/Catalog Information	FDW2501N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	18 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds	1290pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2501N FDW2501N