FDW2502P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.4 A
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 35 m Ohms


Features:

4.4 A, 20 V. R_DS(ON) = 0.035 @ V_GS = 4.5 V

                            R_DS(ON) = 0.057 @ V_GS = 2.5 V. 

Extended V_GSS range (±12V) for battery applications. 

High performance trench technology for extremely low R_DS(ON) . 

Low profile TSSOP-8 package.

Application




Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	4.4	A
		30
PD	Total Power Dissipation (Note 1a) (Note 1b)	1.0	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150

Description

This P-Channel 2.5V specified MOSFET FDW2502P is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (2.5V 12V).


Parameters:

Technical/Catalog Information	FDW2502P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.4A
Rds On (Max) @ Id, Vgs	35 mOhm @ 4.4A, 4.5V
Input Capacitance (Ciss) @ Vds	1465pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2502P FDW2502P