FDW2501NZ

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 18 m Ohms
Configuration : Dual Dual Source


Features:

6 A, 20 V.   R_DS(ON) = 0.018 @ VGS = 4.5V
                     R_DS(ON) = 0.028 @ VGS = 2.5V

Extended VGSS range (±12V) for battery applications. 

ESD protection diode (note 3).

High performance trench technology for extremelylow R_DS(ON)

Low profile TSSOP-8 package

 

Low profile TSSOP-8 package

Application

Load switch

Motor drive

DC/DC conversion

Power management

Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6	A
		30
PD	Power Dissipation (Note 1a) (Note 1b)	1.0	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This N-Channel 2.5V specified MOSFET FDW2501NZ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Parameters:

Technical/Catalog Information	FDW2501NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	18 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1286pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2501NZ FDW2501NZ