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This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW2501NZ Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
6
A
30
PD
Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDW2501NZ Features
6 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5V RDS(ON) = 0.028 @ VGS = 2.5V
Extended VGSS range (±12V) for battery applications.
ESD protection diode (note 3).
High performance trench technology for extremelylow RDS(ON)