Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW2502P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
4.4
A
30
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW2502P Features
4.4 A, 20 V. RDS(ON) = 0.035 @ VGS = 4.5 V
RDS(ON) = 0.057 @ VGS = 2.5 V.
Extended VGSS range (±12V) for battery applications.
High performance trench technology for extremely low RDS(ON) .
Low profile TSSOP-8 package.
FDW2502P Typical Application
Load switch
Motor drive
DC/DC conversion
Power management
FDW2502P Connection Diagram
FDW2502PZ General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW2502PZ Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
4.4
A
30
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW2502PZ Features
4.4 A, 20 V.RDS(ON) = 0.035 @ VGS = 4.5 V
RDS(ON) = 0.057 @ VGS = 2.5 V.
Extended VGSS range (±12V) for battery applications.
ESD protection diode (note 3).
High performance trench technology for extremely low RDS(ON) .