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This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
FDW2504P Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
-3.8
A
-30
PD
Total Power Dissipation (Note 1a) (Note 1b)
1.0
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
FDW2504P Features
3.8 A, 20 V, R DS(ON) = 0.043@ VGS = 4.5 V
R DS(ON) = 0.070@ VGS = 2.5V
Extended VGSS range (±12V) for battery applications
Low gate charge
High performance trench technology for extremely low RDS(ON)