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FDW2503N, FDW2503NZ, FDW2504

Table of contents:
Info of FDW2503N
Info of FDW2503NZ
Info of FDW2504

FDW2503N, FDW2503NZ, FDW2504 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TSSOP8 D/C:06+

FDW2503N, FDW2503NZ, FDW2504 Datasheet download

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Part Number: FDW2503N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TSSOP8

D/C: 06+

Description: MOSFET N-CH DUAL 20V 5.5A 8-TSSO

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FDW2503N Parameters

Technical/Catalog Information	FDW2503N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	21 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1082pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2503N FDW2503N

FDW2503N General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

FDW2503N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	5.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation (Note 1a) (Note 1b)	1.0	W
P_D	Power Dissipation (Note 1a) (Note 1b)	0.6	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	C

FDW2503N Features

5.5 A, 20 V. R _DS(ON) = 0.021@ V_GS = 4.5 V
R _DS(ON) = 0.035@ V_GS = 2.5 V
Extended VGSS range ( ±12V) for battery applications
Low gate charge
High performance trench technology for extremely low R_DS(ON)Low profile TSSOP-8 package

FDW2503N Typical Application

Load switch
Motor drive
DC/DC conversion
Power management

FDW2503N Connection Diagram

FDW2503NZ Parameters

Technical/Catalog Information	FDW2503NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	20 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1286pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2503NZ FDW2503NZ

FDW2503NZ General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

FDW2503NZ Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	5.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation (Note 1a) (Note 1b)	1.0	W
P_D	Power Dissipation (Note 1a) (Note 1b)	0.6	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDW2503NZ Features

5.5 A, 20 V. R_DS(ON) = 20 m@ V_GS = 4.5V

R_DS(ON) = 26 m@ V_GS = 2.5V

Extended VGSS range (±12V) for battery applications

ESD protection diode (note 3)

High performance trench technology for extremely low R_DS(ON)

Low profile TSSOP-8 package

FDW2503NZ Typical Application

Load switch

Motor drive

DC/DC conversion

Power management

FDW2503NZ Connection Diagram

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