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FDW2507N, FDW2507NZ, FDW2507NZ_NL

Table of contents:
Info of FDW2507N
Info of FDW2507NZ
Info of FDW2507NZ_NL

FDW2507N, FDW2507NZ, FDW2507NZ_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDW2507N, FDW2507NZ, FDW2507NZ_NL Picture

FDW2507N, FDW2507NZ, FDW2507NZ_NL Datasheet download

Five Points

Part Number: FDW2507N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 20V 7.5A 8-TSSOP

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FDW2507N Parameters

Technical/Catalog Information	FDW2507N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	19 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds	2152pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2507N FDW2507N

FDW2507N General Description

This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.

FDW2507N Maximum Ratings

Symbol	Parameter	FDV302P	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	7.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.6	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.1	W
T_J,T_STG	Operating and Storage Temperature Range	55 to +150	°C

FDW2507N Features

7.5 A, 20 V. R_DS(ON) = 19 m @ V_GS= 4.5 V
R_DS(ON) = 23 m @ V_GS= 2.5 V
Isolated source and drain pins
High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
Low profile TSSOP-8 package

FDW2507N Typical Application

Li-Ion Battery Pack

FDW2507N Connection Diagram

FDW2507NZ Parameters

Technical/Catalog Information	FDW2507NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	19 mOhm @ 7.5A, 4.5V
Input Capacitance (Ciss) @ Vds	2152pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2507NZ FDW2507NZ

FDW2507NZ General Description

This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the R_DS(ON) @ V_GS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.

FDW2507NZ Maximum Ratings

Symbol	Parameter	FDV302P	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	7.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.6	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.1	W
T_J,T_STG	Operating and Storage Temperature Range	55 to +150	°C

FDW2507NZ Features

Li-Ion Battery Pack

FDW2507NZ Typical Application

7.5 A, 20 V R_DS(ON) = 19 m @ V_GS = 4.5 V
R_DS(ON) = 23 m@ V_GS = 2.5 V
Isolated source and drain pins
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V
Low profile TSSOP-8 package

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