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This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailoredto minimizetheon-stateresistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds(on) and gate charge this device can be effectively used as a "high side" control switch or "low side" synchronous rectifier.
FDM6296 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
11.5
A
40
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
2.5
W
1.2
TJ, Tstg
Operating and StorageJunctionTemperatureRange
-55 to +150
FDM6296 Features
11.5 A, 30 V R DS(ON) = 10.5 m W @ VGS = 10 V R DS(ON) = 15 m W @ VGS = 4.5 V Low Qg, Qgd and Rg for efficient switching performance Low Profile MicroFET 3.3 x 3.3 mm
FDM6296 Typical Application
Point of Load Converter 1/16 Brick Synchronous Rectifier