FDM6296

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11.5 A
Package / Case : MicroFET
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Features:

11.5 A, 30 V R _DS(ON) = 10.5 mW @ V_GS = 10 V
R _DS(ON) = 15 mW @ V_GS = 4.5 V
Low Qg, Qgd and Rg for efficient switching performance
Low Profile MicroFET 3.3 x 3.3 mm




Application

Point of Load Converter
1/16 Brick Synchronous Rectifier




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	11.5	A
		40
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	2.5	W
		1.2
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

The FDM6296 is a kind of single N-channel,logic-level MOSFET. It provides an optimized balance between Rds(on) and gate charge. This device can be effectively used as a 'high side' control switch or 'low side' synchronous rectifier and point of load converter. It has some features as follows. (1) low Qg,Qg and Rg for efficient switching performance; (2) low profile-MicroFET 3.3 *3.3 mm.

What comes next is about FDM6296 absolute maximum ratings at TA is 25 . (1): drain-source volatge (VDSS) is 30 V; (2): gate-source voltage (VGSS) is ±20 V; (3): drain current (ID) is 11.5 A for continuous and is 40 A for pulsed; (4): power dissipation(PD) is 2.5 W; (5): operating and storage temperature are both from -55 to 150 . Then is about the electrical characters at TA is 25 . (1): the minimum drain-source breakdown voltage is 30 V when VGS is 0 V and ID is 250 A; (2): the typical gate threshold voltage is 1.9 V,the minimum is 1 V and the maximum is 3 V at VDS is VGS and ID is 250 A; (3): the typical turn-on rise time is 5 ns and the maximum is 10 ns at VDD is 15 V and ID is 1 A; (4): the typical turn-off fall time is 13 ns and the maximum is 23 ns when VDD is 15 V and ID is 1 A.

If you want more about FDM6296 electrical characters,please download the datasheet at www.seekic.com.

Parameters:

Technical/Catalog Information	FDM6296
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.5A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds	2005pF @ 15V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	Power33
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDM6296 FDM6296 FDM6296CT ND FDM6296CTND FDM6296CT