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FDM606P_Q

MOSFET P-Ch Power Trench Logic Level 1.8V

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SeekIC No. : 00166913 Detail

FDM606P_Q: MOSFET P-Ch Power Trench Logic Level 1.8V

FDM606P_Q Data Sheet

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Part Number:
FDM606P_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 6.8 A
Resistance Drain-Source RDS (on) : 0.026 Ohms Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Hex Drain
Continuous Drain Current : - 6.8 A
Resistance Drain-Source RDS (on) : 0.026 Ohms
Package / Case : MicroFET-8


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