MOSFET P-Ch Power Trench Logic Level 1.8V
FDM606P_Q: MOSFET P-Ch Power Trench Logic Level 1.8V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 6.8 A | ||
Resistance Drain-Source RDS (on) : | 0.026 Ohms | Configuration : | Single Hex Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MicroFET-8 | Packaging : | Reel |