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This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.
FDM2452NZ Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
8.1
A
30
PD
Power Dissipation (Steady State) (Note 1a) (Note 1b)
2.2
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDM2452NZ Features
• 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V • ESD protection Diode(note 3) • Low Profile 0.8 mm maximum in the new package MicroFET 2 x 5 mm