MOSFET 100V N-Ch PowerTrench MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.4 A | ||
Resistance Drain-Source RDS (on) : | 0.044 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MicroFET | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain to Source Voltage |
100 |
V |
VGS |
Gate to Source Voltage |
± 20 |
V |
ID |
Drain Current Continuous (TC = 25 oC, VGS = 10V, RJA = 52/W) |
4.4 |
A |
Continuous (TC = 25 oC, VGS = 6V, RJA = 52/W) |
3.8 |
||
Continuous (TC = 100oC, VGS = 10V, RJA = 52/W) |
2.8 |
A | |
Pulsed Figure |
4 |
A | |
EAS |
Single Pulse Avalanche Energy (Note 2) |
190 |
mJ |
PD |
Power dissipation |
2.4 |
W |
Derate above 25 |
19 |
mW/ | |
TJ, TSTG |
Operating and Storage Temperature |
-55 to 150 |
This FDM3622 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Technical/Catalog Information | FDM3622 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 4.4A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.4A, 10V |
Input Capacitance (Ciss) @ Vds | 1090pF @ 25V |
Power - Max | 900mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Package / Case | Power33 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDM3622 FDM3622 FDM3622DKR ND FDM3622DKRND FDM3622DKR |