FDM3300NZ

MOSFET 2.5V N-Ch MOSFET Common Drain

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SeekIC No. : 00160059 Detail

FDM3300NZ: MOSFET 2.5V N-Ch MOSFET Common Drain

floor Price/Ceiling Price

Part Number:
FDM3300NZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Dual Common Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : MicroFET Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 10 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : MicroFET
Resistance Drain-Source RDS (on) : 0.016 Ohms
Configuration : Dual Common Quad Drain


Features:

•  10 A, 20 V     RDS(ON) =  23 mΩ @ VGS = 4.5 V
                         RDS(ON) =  28 mΩ @ VGS = 2.5 V
•  > 2000v ESD Protection
•  Low Profile 1mm maximum in the new package
    MicroFET 3.3x3.3 mm



Application

•  Li-Ion Battery Pack


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current  Continuous              (Note 1a)
                       Pulsed
10
A
40
PD
Power Dissipation (Steady State)       (Note 1a)
                                                           (Note 1b)
2.5
W
1.2
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C



Description

This FDM3300NZ  dual  N-Channel  MOSFET  has  been  designed using  Fairchild  Semiconductors  advanced  Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead  frame with all the drains on one side of the package.




Parameters:

Technical/Catalog InformationFDM3300NZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs23 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds 1610pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 4.5V
Package / CasePower33
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDM3300NZ
FDM3300NZ



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