MOSFET 2.5V N-Ch MOSFET Common Drain
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.016 Ohms | Configuration : | Dual Common Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | MicroFET | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
10 |
A |
40 | |||
PD |
Power Dissipation (Steady State) (Note 1a) (Note 1b) |
2.5 |
W |
1.2 | |||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
This FDM3300NZ dual N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.
Technical/Catalog Information | FDM3300NZ |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 10A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1610pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
Package / Case | Power33 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDM3300NZ FDM3300NZ |