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FDM3300N, FDM3300NZ, FDM3300NZA

Table of contents:
Info of FDM3300N
Info of FDM3300NZ
Info of FDM3300NZA

FDM3300N, FDM3300NZ, FDM3300NZA Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SSOP16 D/C:2003

FDM3300N, FDM3300NZ, FDM3300NZA Datasheet download

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Part Number: FDM3300N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SSOP16

D/C: 2003

Description: MOSFET N-CH DUAL 20V 10A MCRFET

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FDM3300NZ Parameters

Technical/Catalog Information	FDM3300NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	23 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	1610pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	Power33
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDM3300NZ FDM3300NZ

FDM3300NZ General Description

This dual N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to optimize the R_DS(ON) @ V_GS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.

FDM3300NZ Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	10	A
I_D	Drain Current Continuous (Note 1a) Pulsed	40	A
P_D	Power Dissipation (Steady State) (Note 1a) (Note 1b)	2.5	W
P_D	Power Dissipation (Steady State) (Note 1a) (Note 1b)	1.2	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDM3300NZ Features

• 10 A, 20 V     R_DS(ON) = 23 mΩ @ V_GS = 4.5 V
                         R_DS(ON) = 28 mΩ @ V_GS = 2.5 V
• > 2000v ESD Protection
• Low Profile 1mm maximum in the new package
    MicroFET 3.3x3.3 mm

FDM3300NZ Typical Application

• Li-Ion Battery Pack

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