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This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDM3622 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
± 20
V
ID
Drain Current
Continuous (TC = 25 oC, VGS = 10V, RJA = 52/W)
4.4
A
Continuous (TC = 25 oC, VGS = 6V, RJA = 52/W)
3.8
Continuous (TC = 100oC, VGS = 10V, RJA = 52/W)
2.8
A
Pulsed Figure
4
A
EAS
Single Pulse Avalanche Energy (Note 2)
190
mJ
PD
Power dissipation
2.4
W
Derate above 25
19
mW/
TJ, TSTG
Operating and Storage Temperature
-55 to 150
FDM3622 Features
rDS(ON)= 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse)
FDM3622 Typical Application
Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Formerly developmental type 82744