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FDMA1027P, FDMA1027PT, FDMA1027PZ

Table of contents:
Info of FDMA1027P
Info of FDMA1027PT
Info of FDMA1027PZ

FDMA1027P, FDMA1027PT, FDMA1027PZ Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:DFN-6 D/C:07+

FDMA1027P, FDMA1027PT, FDMA1027PZ Datasheet download

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Part Number: FDMA1027P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: DFN-6

D/C: 07+

Description: MOSFET P-CH 20V DUAL MICROFET

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FDMA1027P Parameters

Technical/Catalog Information	FDMA1027P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	120 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds	435pF @ 10V
Power - Max	1.4W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	Microfet 2x2
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDMA1027P FDMA1027P FDMA1027PDKR ND FDMA1027PDKRND FDMA1027PDKR

FDMA1027P General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

FDMA1027P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	2.2	A
I_D	Drain Current Continuous (Note 1a) Pulsed	6	A
P_D	Power Dissipation (Steady State) (Note 1a) (Note 1b)	1.4	W
P_D	Power Dissipation (Steady State) (Note 1a) (Note 1b)	0.7	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDMA1027P Features

• 3.0 A, 20V. R_DS(ON) = 120 mΩ @ V_GS = 4.5V
                            R_DS(ON) = 160 mΩ @ V_GS= 2.5V
                             R_DS(ON) = 240 mΩ @ V_GS = 1.8V
• Low profile 0.8 mm maximum in the new package
    MicroFET 2x2 mm

FDMA1027P Connection Diagram

FDMA1027PT Parameters

Technical/Catalog Information	FDMA1027PT
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	120 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds	435pF @ 10V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	Microfet 2x2
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDMA1027PT FDMA1027PT FDMA1027PTTR ND FDMA1027PTTRND FDMA1027PTTR

FDMA1027PT General Description

This device is designed specifically as a single package solutionfor the battery charge switch in cellular handset and otherultra-portable applications. It features two independentP-Channel MOSFETs with low on-state resistance for minimumconduction losses. When connected in the typical commonsource configuration, bi-directional current flow is possible.

The MicroFET 2x2 Thin package offers exceptional thermalperformance for it's physical size and is well suited to linearmode applications.

FDMA1027PT Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDMA1027PT	Full Production	Green	$0.65	MicroFET	6	TAPE REEL		Line 1: &E&Y (Binary Calendar Year Coding) Line 2: &O27&C Line 3: &.&O&V

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDMA1027PT is available. Click here for more information .

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