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The HOA1888 Series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1888-011) or photodarlington (HOA1888-013) encased in a black thermoplastic housing. Detector switching takes place when...
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The HOA1887 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1887011,012) or photodarlington (HOA1887013) encased in a black thermoplastic housing. Detector switching takes place wh...
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The HOA1886 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1886011, 012) or photodarlington (HOA1886013) encased in a black thermoplastic housing with IR transmissive inserts...
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The HOA1885 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1885011,012) or photodarlington (HOA1885013) encased in a black thermoplastic housing with IR transmissive inserts which...
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The HOA1884 series consists of an infrared emitting diode facing an NPN silicon phototransistor (011,012) or photodarlington (013) encased in a black thermoplastic housing. Detector switching takes place whenever an opaq...
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The HOA1883 series consists of an infrared emitting diode facing an NPN silicon phototransistor (011, 012) or photodarlington (013) encased in a black thermoplastic housing. Detector switching takes place whenever an opa...
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The HOA1882 series consists of an infrared emitting diode facing an NPN silicon phototransistor (011,012) or photodarlington (013) encased in a black IR transmissive thermoplastic housing. Detector switching takes place ...
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The HOA1881 series consists of an infrared emitting diode facing an NPN silicon phototransistor (011,012) or photodarlington (013) encased in a black thermoplastic housing. Detector switching takes place whenever an opaq...
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The HOA1879 series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black IR transmissive thermoplastic housing. Detector switching takes place whenever an opaque object passes th...
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The HOA1877 series consists of an infrared emitting diode facing an NPN silicon phototransistor (001,002) or photodarlington (003) encased in a black thermoplastic housing. Detector switching takes place whenever an opaq...
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The HOA1876 series consists of an infrared emitting diode facing an NPN silicon phototransistor (001,002) or photodarlington (003)encased in a white thermoplastic housing. Detector switching takes place whenever an opaqu...
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The HOA1875 series is designed as one kind of transmissive sensor with sone features such as:(1)choice of phototransistor or photodarlington output;(2)low profile package;(3)wide operating temperature range(-55 to +100);...
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The HOA1875 series consists of an infrared emitting diode facing an NPN silicon phototransistor (001,002) or photodarlington (003) encased in a black thermoplastic housing. Detector switching takes place whenever an opaq...
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The HOA1874 series consists of an infrared emitting diode facing an NPN silicon phototransistor (001,002,011,012) or photodarlington (003,013) encased in a black thermoplastic housing. Detector switching takes place when...
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The HOA1873 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1873001, 002, 011, 012) or photodarlington (HOA1873003, 013) encased in a black thermoplastic housin...
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The HOA1872 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1872001,002, 011,012) or photodarlington (HOA1872003,013) encased in a black thermoplastic housing. Detector switching t...
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The HOA1870 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1870- 031) or photodarlington (HOA1870- 033) encased in a black thermoplastic housing. Detector switching takes place wh...
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The HOA1405 series consists of an infrared emitting diode and an NPN silicon phototransistor encased sideby- side on converging optical axes in a black thermoplastic housing. The phototransistor responds to radiation fro...
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The HOA1180 series consists of an infrared emitting diode and an NPN silicon phototransistor(HOA1180001,002) or photodarlington (HOA1180003),encased sidebyside on converging optical axes in a black thermoplastic housing....
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The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing.Phototransistor switching takes place whenever an opaque object passes through...
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The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing.Phototransistor switching takes place whenever an opaque object passes through...
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The HOA0825 consists of a GaAs LED and silicon Photo Transistor mounted in Black VO rated plastic housing with a 4mm gap. The SSS-002 offers the same specification with an additional right angle mounting lug and flying ...
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The frequency of this oscillator HO4006 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, oscillator operating at the fundamental frequency of 640.0 MH...
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The HO4002-1: SAW Frequency Stabilization Fundamental-Mode Oscillation at 400.0 MHz A Rugged, Compact General-Purpose Oscillator Complies with Directive 2002/95/EC (RoHS)
The frequency of this oscillator HO4002-1 is sta...
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The frequency of this oscillator HO4001-1 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, scillator operating at the fundamental frequency of 1000.0 ...
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VTM offer a very competitively priced range of full size (HO- 12) and half size (HO- 22) HCMOS / TTL Crystal oscillators like HO-22. They are housed in a resistance welded case. The frequency range available is 1.000 to ...
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This general-purpose oscillator HO1324 is stabilized by surface-acoustic-wave (SAW) technology. Fundamental oscillation at 640.0 MHz eliminates all internally enerated spurious outputs except integral harmonics of 640.0 ...
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This general-purpose oscillator HO1301 is stabilized by surface-acoustic-wave (SAW) technology. Fundamental oscillation at 750.0 MHz eliminates all internally enerated spurious outputs except integral harmonics of 750.0 ...
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This general-purpose oscillator HO1300 is stabilized by surface-acoustic-wave (SAW) technology. Fundamental oscillation at 700.0 MHz eliminates all internally generated spurious outputs except integral harmonics of 700.0...
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The HO1081-3: SAW Frequency Stabilization Fundamental-Mode Oscillation at 1090.0 MHz Ideal for ATC/TCAS Transponder Applications Complies with Directive 2002/95/EC (RoHS)
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The frequency of this oscillator HO1081 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, ermetically-sealed oscillator operating at the fundamental f...
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The HO1080-3: SAW Frequency Stabilization Fundamental-Mode Oscillation at 1030.0 MHz Ideal for ATC/TCAS Transponder Applications Complies with Directive 2002/95/EC (RoHS)
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The frequency of this oscillator HO1080 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, scillator operating at the fundamental frequency of 1030.0 MH...
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The frequency of this oscillator HO1079 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, scillator operating at the fundamental frequency of 1090.0 MH...
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The frequency of this oscillator HO1078 is stabilized by surface-acoustic-wave (SAW) technology. This results in excellent performance from a compact, rugged, scillator operating at the fundamental frequency of 1030.0 MH...
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This general-purpose oscillator HO1065 is stabilized by surface-acoustic-wave (SAW) technology. Fundamental oscillation at 400.0 MHz eliminates all internally generated spurious outputs except integral harmonics of 400.0...
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This general-purpose oscillator HO1056 is stabilized by surface-acoustic-wave (SAW) technology. Fundamental oscillation at 310.0 MHz eliminates all internally enerated spurious outputs except integral harmonics of 310.0...
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This 915.0 MHz surface-acoustic-wave (SAW) oscillator HO1045 is designed for Industrial, Scientific, and Medical (ISM) applications and as the local oscillator in FCC Part 15.247 radios. Fundamental oscillation at 915.0 ...
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The HNIO-241RX: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes Fully configurable through DIP switches FHSS technology a...
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The HNIO-241RR: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes Fully configurable through DIP switches FHSS technology a...
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The HNIO-241R: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes Fully configurable through DIP switches FHSS technology at...
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HNIO-241AX send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable through DIP switches FHSS technology at 460.8 kb/s data rate Class I Div 2 certi...
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HNIO-241AR send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable through DIP switches FHSS technology at 460.8 kb/s data rate Class I Div 2 certi...
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The HNIO-241A send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable through DIP switches FHSS technology at 460.8 kb/s data rate Class I Div 2 ce...
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The HNIO-091RX: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes FHSS technology at 172.8 kb/s rate Class I Div 2 Certifie...
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The HNIO-091RR: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes FHSS technology at 172.8 kb/s rate Class I Div 2 Certifie...
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The HNIO-091R: Remotely control industrial relays Remotely monitor contacts/digital inputs Multipoint, bidirectional operation Four I/O channels, up to 4 remotes FHSS technology at 172.8 kb/s rate Class I Div 2 Certified...
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HNIO-091AX send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable with DIP switches FHSS technology at 172.8 kb/s data rate Class I Div 2 certifie...
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HNIO-091AR send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable with DIP switches FHSS technology at 172.8 kb/s data rate Class I Div 2 certifie...
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HNIO-091A send/receive 4-20 mA and control relays Multipoint, bidirectional operation Two analog and two relay channels Fully configurable with DIP switches FHSS technology at 172.8 kb/s data rate Class I Div 2 certified...
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The HNC-40CA is for the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
Mfg:NA.NA/LEM Vendor:Other Category:Other
The HNC-300P is for the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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The HNC-280P is for the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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The HNC-260P is for the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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The HNC-250P is For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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The HNC-230P is For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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The HNC-210P is For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
Mfg:NA.NA/LEM Vendor:Other Category:Other
The HNC-200P is For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
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Mfg:LA Pack:MODULE Vendor:Other Category:Other
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The HNC: Pin header, Discrete wire crimping connection, Discrete wire connectors
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The HN9C22FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C21FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C20FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C19FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C16FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C15FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C14FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C13FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C12FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.The H...
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The HN9C10FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C09FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
Vendor:Other Category:Other
The HN9C08FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.The H...
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The HN9C07FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C05FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C04FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C03FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C02FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C01FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.T...
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The HN9C01FE has the feature of two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6. And it can be used in VHF-UHF band low noise amplifier applications. The absolute maximum ratings of...
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Mfg:tos Pack:TP85L D/C:05+ Vendor:Other Category:Other
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Mfg:TOSHIBA Pack:SOT-363 D/C:05+ Vendor:Other Category:Other
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Mfg:TOSHIBA Pack:SOT-363 Vendor:Other Category:Other
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The HN62W5432N is a 32 Mbit CMOS Mask programmable ROM organized either as 1,048,576 word by 32 bit or as 2,097,152 word by 16 bit. Realizing low power consumption, this memory is allowed for batery operation. And high s...
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The HN62W5016N is a 16-Mbit CMOS mask-programmable ROM organized either as 524,288-word by 32-bit or as 1,048,576-word by 16-bit. Realizing low power consumption, this memory is allowed for battery operation. And a high ...
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The HN62W454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 120/150 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.
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The HN62W454 is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed a...
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