HN7G10FE Selling Leads, Price trend, HN7G10FE DataSheet download, circuit diagram from SeekIC.com

Application• Q1 (transistor): 2SC5376F equivalent• Q2 (MOSFET): SSM3K03FE equivalentSpecificationsQ1 (transistor) Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 1...

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SeekIC No. : 004365130 Detail

HN7G10FE: Application• Q1 (transistor): 2SC5376F equivalent• Q2 (MOSFET): SSM3K03FE equivalentSpecificationsQ1 (transistor) Absolute Maximum Ratings (Ta = 25) Characteristic Symbol R...

HN7G10FE Data Sheet

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Part Number:: HN7G10FE
Supply Ability:: 5000

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Upload time: 2024/11/21

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HN7G01FE-A(TE85L,F evaluate
US $.03 - .05 / Piece

Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
HN7G01FU evaluate
PinoutSpecifications Q1 (transistor) Maximum Ratings (Ta = 25°C) Charact...
HN7G01FU-A(T5L,F,T evaluate
US $.03 - .05 / Piece

Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA

Product Details

Description

Application

• Q1 (transistor): 2SC5376F equivalent
• Q2 (MOSFET): SSM3K03FE equivalent

Specifications

Q1 (transistor) Absolute Maximum Ratings (Ta = 25)

Characteristic	Symbol	Rating	Unit
Collector-base voltage	V_CBO	15	V
Collector-emitter voltage	V_CEO	12	V
Collector current	I_C	400	mA
Collector current	I_B	50	mA

Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25)

Characteristic	Characteristic	Rating	Unit
V_DS	Drain-Source Voltage	20	V
V_GSS	Gate-source voltage	10	V
I_D	Continuous Drain Current	50	mA

Q1, Q2 Common Ratings (Ta = 25)

Characteristic	Symbol	Rating	Unit
Base current	P_C (Note 1)	100	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating

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HN7G10FE

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