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HN7G10FE

Application• Q1 (transistor): 2SC5376F equivalent• Q2 (MOSFET): SSM3K03FE equivalentSpecificationsQ1 (transistor) Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 1...

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HN7G10FE: Application• Q1 (transistor): 2SC5376F equivalent• Q2 (MOSFET): SSM3K03FE equivalentSpecificationsQ1 (transistor) Absolute Maximum Ratings (Ta = 25) Characteristic Symbol R...

HN7G10FE Data Sheet

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Part Number:
HN7G10FE
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Description



Application

• Q1 (transistor): 2SC5376F equivalent
• Q2 (MOSFET): SSM3K03FE equivalent


Specifications

Q1 (transistor) Absolute Maximum Ratings (Ta = 25)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Collector current
IC
400
mA
Collector current
IB
50
mA


Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25)
Characteristic Characteristic Rating Unit
VDS Drain-Source Voltage 20 V
VGSS Gate-source voltage 10
 V
ID Continuous Drain Current 50 mA

Q1, Q2 Common Ratings (Ta = 25)

Characteristic
Symbol
Rating
Unit
Base current
PC (Note 1)
100
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating




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