Specifications Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -50 V Emitter-base voltage ...
HN7G02FU: Specifications Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V ...
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Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
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Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
Q1 (transistor) Maximum Ratings (Ta = 25°C)
Characteristics |
Symbol |
Rating |
Unit |
Collector-base voltage | VCBO |
-15 |
V |
Collector-emitter voltage | VCEO |
-50 |
V |
Emitter-base voltage | VEBO |
-5 |
V |
Collector current | IC |
-100 |
mA |
Q2 (MOS-FET) Maximum Ratings (Ta =25°C)
Characteristics |
Symbol |
Rating |
Unit |
Drain-source voltage | VDS |
20 |
V |
Gate-source voltage | VGSS |
10 |
V |
Drain current | ID |
50 |
mA |