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HN62W454

Features: • Low voltage operation - Operating supply voltage: 3.3 V ± 0.3 V• High speed - Access time: 120/150 ns (max)• Low power - Active: 216 mW (max) - Standby: 108 W (max)• Byte-wide or word-wide data organization (Switched by BHE terminal)• Three-state data outp...

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SeekIC No. : 004365117 Detail

HN62W454: Features: • Low voltage operation - Operating supply voltage: 3.3 V ± 0.3 V• High speed - Access time: 120/150 ns (max)• Low power - Active: 216 mW (max) - Standby: 108 W (max)R...

HN62W454 Data Sheet

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Part Number:
HN62W454
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low voltage operation
   - Operating supply voltage: 3.3 V ± 0.3 V
• High speed
   - Access time: 120/150 ns (max)
• Low power
   - Active: 216 mW (max)
   - Standby: 108 W (max)
• Byte-wide or word-wide data organization (Switched by BHE terminal)
• Three-state data output for or-tying
• Directly LVTTL compatible
   - All inputs and outputs


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage*1
VDD
0.3 to +5.5
V
All input and output voltage*1
Vin, Vout
0.3 to VDD + 0.3
V
Operating temperatue range
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Temperature under bias
Tbias
20 to + 85
°C
Notes:
1. With respect to VSS.


Description

The HN62W454 is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 120 ns (max) is the most suitable to the system using a high speed microcomputer by 16 bits.




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