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HN62W5016N

Features: • Low voltage operation: 3.3 V ± 0.3 V• High Speed Normal access time: 120 ns/150 ns (max) Page access time: 40 ns/50 ns (max)• Low power consumption Active: 360 mW (max) Standby: 0.72 W (max) Power down mode: 36 mW (max)• Double word-wide or word-wide data organi...

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SeekIC No. : 004365119 Detail

HN62W5016N: Features: • Low voltage operation: 3.3 V ± 0.3 V• High Speed Normal access time: 120 ns/150 ns (max) Page access time: 40 ns/50 ns (max)• Low power consumption Active: 360 mW (max)...

HN62W5016N Data Sheet

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Part Number:
HN62W5016N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low voltage operation: 3.3 V ± 0.3 V
• High Speed
   Normal access time: 120 ns/150 ns (max)
   Page access time: 40 ns/50 ns (max)
• Low power consumption
   Active: 360 mW (max)
   Standby: 0.72 W (max)
   Power down mode: 36 mW (max)
• Double word-wide or word-wide data organization with DW/W
• 4 double-word page access on double word-wide mode
• 8 word page access on word-wide mode
• Three-state data output for or-tying
• LVTTL compatible


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Note
Supply voltage
VDD
0.3 to +5.5
V
1
All input and output voltage
Vin, Vout
0.3 to VDD + 0.3
V
1
Operating temperatue range
Topr
0 to +70
°C
  
Storage temperature range
Tstg
55 to +125
°C
  
Temperature under bias
Tbias
20 to + 85
°C
  
Notes:
1. With respect to VSS.



Description

The HN62W5016N is a 16-Mbit CMOS mask-programmable ROM organized either as 524,288-word by 32-bit or as 1,048,576-word by 16-bit. Realizing low power consumption, this memory is allowed for battery operation. And a high speed access of 120/150 ns is the most suitable to the system using a high
speed micro-computer by 32-bit.




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